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Exercise:
The concentration of free charge carriers in bismuth is measured using the Hall effect. An electric current of IO flows through a tO thick bismuth strip. When the strip is placed in a uniform magnetic field with a magnitude of BO the Hall voltage is measured to be VO. Calculate the resulting concentration of free charge carriers and compare it to the accepted value.

Solution:
The Hall voltage is V_H fracI Bn_e t e Solving for the concentration of free charge carriers yields n_e nF fracB times IV times t times nce n approx resultnS The accepted value is nWPO nWPmS which is in good agreement with the measured value
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Exercise:
The concentration of free charge carriers in bismuth is measured using the Hall effect. An electric current of IO flows through a tO thick bismuth strip. When the strip is placed in a uniform magnetic field with a magnitude of BO the Hall voltage is measured to be VO. Calculate the resulting concentration of free charge carriers and compare it to the accepted value.

Solution:
The Hall voltage is V_H fracI Bn_e t e Solving for the concentration of free charge carriers yields n_e nF fracB times IV times t times nce n approx resultnS The accepted value is nWPO nWPmS which is in good agreement with the measured value
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Branches
Magnetism
Tags
hall effect, hall voltage
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Difficulty
(1, default)
Points
0 (default)
Language
ENG (English)
Type
Calculative / Quantity
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Decoration