NAND-Gate aus Transistoren
About points...
We associate a certain number of points with each exercise.
When you click an exercise into a collection, this number will be taken as points for the exercise, kind of "by default".
But once the exercise is on the collection, you can edit the number of points for the exercise in the collection independently, without any effect on "points by default" as represented by the number here.
That being said... How many "default points" should you associate with an exercise upon creation?
As with difficulty, there is no straight forward and generally accepted way.
But as a guideline, we tend to give as many points by default as there are mathematical steps to do in the exercise.
Again, very vague... But the number should kind of represent the "work" required.
When you click an exercise into a collection, this number will be taken as points for the exercise, kind of "by default".
But once the exercise is on the collection, you can edit the number of points for the exercise in the collection independently, without any effect on "points by default" as represented by the number here.
That being said... How many "default points" should you associate with an exercise upon creation?
As with difficulty, there is no straight forward and generally accepted way.
But as a guideline, we tend to give as many points by default as there are mathematical steps to do in the exercise.
Again, very vague... But the number should kind of represent the "work" required.
About difficulty...
We associate a certain difficulty with each exercise.
When you click an exercise into a collection, this number will be taken as difficulty for the exercise, kind of "by default".
But once the exercise is on the collection, you can edit its difficulty in the collection independently, without any effect on the "difficulty by default" here.
Why we use chess pieces? Well... we like chess, we like playing around with \(\LaTeX\)-fonts, we wanted symbols that need less space than six stars in a table-column... But in your layouts, you are of course free to indicate the difficulty of the exercise the way you want.
That being said... How "difficult" is an exercise? It depends on many factors, like what was being taught etc.
In physics exercises, we try to follow this pattern:
Level 1 - One formula (one you would find in a reference book) is enough to solve the exercise. Example exercise
Level 2 - Two formulas are needed, it's possible to compute an "in-between" solution, i.e. no algebraic equation needed. Example exercise
Level 3 - "Chain-computations" like on level 2, but 3+ calculations. Still, no equations, i.e. you are not forced to solve it in an algebraic manner. Example exercise
Level 4 - Exercise needs to be solved by algebraic equations, not possible to calculate numerical "in-between" results. Example exercise
Level 5 -
Level 6 -
When you click an exercise into a collection, this number will be taken as difficulty for the exercise, kind of "by default".
But once the exercise is on the collection, you can edit its difficulty in the collection independently, without any effect on the "difficulty by default" here.
Why we use chess pieces? Well... we like chess, we like playing around with \(\LaTeX\)-fonts, we wanted symbols that need less space than six stars in a table-column... But in your layouts, you are of course free to indicate the difficulty of the exercise the way you want.
That being said... How "difficult" is an exercise? It depends on many factors, like what was being taught etc.
In physics exercises, we try to follow this pattern:
Level 1 - One formula (one you would find in a reference book) is enough to solve the exercise. Example exercise
Level 2 - Two formulas are needed, it's possible to compute an "in-between" solution, i.e. no algebraic equation needed. Example exercise
Level 3 - "Chain-computations" like on level 2, but 3+ calculations. Still, no equations, i.e. you are not forced to solve it in an algebraic manner. Example exercise
Level 4 - Exercise needs to be solved by algebraic equations, not possible to calculate numerical "in-between" results. Example exercise
Level 5 -
Level 6 -
Question
Solution
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Exercise:
Wie baut man ein textttNAND-Gate aus Transistoren?
Solution:
center circuitikzamerican % Inputs node at - A A; node at - B B; % Vdd and GND draw . nodevcc Vdd V_DD; draw -. nodeground GND ; % PMOS transistors parallel draw toshort topmos namePM % PMOS toshort ; draw topmos namePM % PMOS toshort ; draw PM.gate -- ++- nodeanchoreast A; draw PM.gate -- ++- nodeanchoreast B; % NMOS transistors series draw tonmos nameNM - % NMOS tonmos nameNM - % NMOS toshort -. -- GND; draw NM.gate -- ++- nodeanchoreast A; draw NM.gate -- ++- nodeanchoreast B; % Output draw -- ++ coordinate out; noderight at out Y; drawout thick -- ++; % Labels node at .. CMOS NAND Gate; circuitikz center center circuitikzamerican % Inputs A and B node at - A A; node at -. B B; % Vcc and GND draw . nodevcc Vcc V_CC; draw nodeground GND ; % Resistor draw . toshort . toR lR_ . toshort coordinate node; % First transistor T draw node toshort ++-. toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast A; draw T.E -- ++-. -- GND; % Second transistor T draw T.C toshort ++-. coordinate node toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast B; draw T.E -- ++-. -- GND; % Output Y draw node -- ++ coordinate out; noderight at out Y; % Add a label node at . -Transistor NAND Gate; circuitikz center
Wie baut man ein textttNAND-Gate aus Transistoren?
Solution:
center circuitikzamerican % Inputs node at - A A; node at - B B; % Vdd and GND draw . nodevcc Vdd V_DD; draw -. nodeground GND ; % PMOS transistors parallel draw toshort topmos namePM % PMOS toshort ; draw topmos namePM % PMOS toshort ; draw PM.gate -- ++- nodeanchoreast A; draw PM.gate -- ++- nodeanchoreast B; % NMOS transistors series draw tonmos nameNM - % NMOS tonmos nameNM - % NMOS toshort -. -- GND; draw NM.gate -- ++- nodeanchoreast A; draw NM.gate -- ++- nodeanchoreast B; % Output draw -- ++ coordinate out; noderight at out Y; drawout thick -- ++; % Labels node at .. CMOS NAND Gate; circuitikz center center circuitikzamerican % Inputs A and B node at - A A; node at -. B B; % Vcc and GND draw . nodevcc Vcc V_CC; draw nodeground GND ; % Resistor draw . toshort . toR lR_ . toshort coordinate node; % First transistor T draw node toshort ++-. toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast A; draw T.E -- ++-. -- GND; % Second transistor T draw T.C toshort ++-. coordinate node toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast B; draw T.E -- ++-. -- GND; % Output Y draw node -- ++ coordinate out; noderight at out Y; % Add a label node at . -Transistor NAND Gate; circuitikz center
Meta Information
Exercise:
Wie baut man ein textttNAND-Gate aus Transistoren?
Solution:
center circuitikzamerican % Inputs node at - A A; node at - B B; % Vdd and GND draw . nodevcc Vdd V_DD; draw -. nodeground GND ; % PMOS transistors parallel draw toshort topmos namePM % PMOS toshort ; draw topmos namePM % PMOS toshort ; draw PM.gate -- ++- nodeanchoreast A; draw PM.gate -- ++- nodeanchoreast B; % NMOS transistors series draw tonmos nameNM - % NMOS tonmos nameNM - % NMOS toshort -. -- GND; draw NM.gate -- ++- nodeanchoreast A; draw NM.gate -- ++- nodeanchoreast B; % Output draw -- ++ coordinate out; noderight at out Y; drawout thick -- ++; % Labels node at .. CMOS NAND Gate; circuitikz center center circuitikzamerican % Inputs A and B node at - A A; node at -. B B; % Vcc and GND draw . nodevcc Vcc V_CC; draw nodeground GND ; % Resistor draw . toshort . toR lR_ . toshort coordinate node; % First transistor T draw node toshort ++-. toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast A; draw T.E -- ++-. -- GND; % Second transistor T draw T.C toshort ++-. coordinate node toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast B; draw T.E -- ++-. -- GND; % Output Y draw node -- ++ coordinate out; noderight at out Y; % Add a label node at . -Transistor NAND Gate; circuitikz center
Wie baut man ein textttNAND-Gate aus Transistoren?
Solution:
center circuitikzamerican % Inputs node at - A A; node at - B B; % Vdd and GND draw . nodevcc Vdd V_DD; draw -. nodeground GND ; % PMOS transistors parallel draw toshort topmos namePM % PMOS toshort ; draw topmos namePM % PMOS toshort ; draw PM.gate -- ++- nodeanchoreast A; draw PM.gate -- ++- nodeanchoreast B; % NMOS transistors series draw tonmos nameNM - % NMOS tonmos nameNM - % NMOS toshort -. -- GND; draw NM.gate -- ++- nodeanchoreast A; draw NM.gate -- ++- nodeanchoreast B; % Output draw -- ++ coordinate out; noderight at out Y; drawout thick -- ++; % Labels node at .. CMOS NAND Gate; circuitikz center center circuitikzamerican % Inputs A and B node at - A A; node at -. B B; % Vcc and GND draw . nodevcc Vcc V_CC; draw nodeground GND ; % Resistor draw . toshort . toR lR_ . toshort coordinate node; % First transistor T draw node toshort ++-. toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast A; draw T.E -- ++-. -- GND; % Second transistor T draw T.C toshort ++-. coordinate node toempty npn nameT ++-.; draw T.B -- ++- nodeanchoreast B; draw T.E -- ++-. -- GND; % Output Y draw node -- ++ coordinate out; noderight at out Y; % Add a label node at . -Transistor NAND Gate; circuitikz center
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Digitalelektronik 1 by uz